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APTGT50DSK120T3G Dual Buck chopper Fast Trench + Field Stop IGBT(R) Power Module 13 14 VCES = 1200V IC = 50A @ Tc = 80C Application * AC and DC motor control * Switched Mode Power Supplies Q1 18 19 Q2 11 10 22 23 7 8 CR2 CR1 29 15 30 31 R1 32 16 Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a single buck of twice the current capability. * RoHS Compliant 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C TJ = 125C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50DSK120T3G - Rev 1 Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Max ratings 1200 75 50 100 20 270 100A @ 1150V Unit V July, 2006 A V W APTGT50DSK120T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Typ Max 250 500 2.1 6.5 400 Unit A V V nA 1.4 5.0 1.7 2.0 5.8 Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A R G = 18 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A R G = 18 VGE = 15V VBus = 600V IC = 50A R G = 18 Tj = 125C Tj = 125C Min Typ 3600 160 90 30 420 70 90 50 520 90 5 Max Unit pF ns ns mJ 5.5 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 70C Min 1200 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=1200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/s IF = 60A VR = 800V di/dt =1000A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 60 2 2.3 1.8 400 470 1200 4000 2.2 2.5 V trr Qrr Er Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy ns nC mJ July, 2006 2-5 APTGT50DSK120T3G - Rev 1 www.microsemi.com APTGT50DSK120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.45 0.9 150 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 2500 -40 -40 -40 2.5 SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50DSK120T3G - Rev 1 July, 2006 17 28 APTGT50DSK120T3G Typical Performance Curve 100 80 T J=125C Output Characteristics (VGE =15V) T J=25C Output Characteristics 100 TJ = 125C 80 IC (A) 60 40 20 0 VGE=17V VGE=13V VGE =15V VGE=9V IC (A) 60 40 20 0 0 0.5 1 1.5 2 V CE (V) 2.5 3 3.5 0 1 2 VCE (V) 3 4 100 80 60 Transfert Characteristics 12 TJ=25C Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 18 TJ = 125C Eoff Eon Eon 10 8 E (mJ) TJ=125C IC (A) 6 4 40 20 0 5 6 7 8 9 V GE (V) 10 11 12 TJ=125C 2 0 10 30 50 IC (A) Reverse Bias Safe Operating Area 120 Eon 70 90 110 Switching Energy Losses vs Gate Resistance 12 11 10 E (mJ) 9 8 7 6 5 4 0 20 40 60 Gate Resistance (ohms) 80 Eoff Eoff VCE = 600V VGE =15V IC = 50A T J = 125C 100 80 IC (A) 60 40 20 0 0 400 800 VCE (V) 1200 1600 VGE =15V TJ =125C RG=18 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10 IGBT rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50DSK120T3G - Rev 1 July, 2006 APTGT50DSK120T3G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80 VCE=600V D=50% RG =18 TJ=125C TC=75C Forward Characteristic of diode 160 140 120 100 IC (A) 80 60 T J=25C T J=125C 60 ZCS ZVS 40 20 hard switching 40 20 0 20 30 40 IC (A) 50 60 70 0 0.5 1 1.5 V F (V) 2 0 0 10 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.5 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50DSK120T3G - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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